RdsOn(Max)@Id | 3.2mOhm @ 30A, 10V |
---|---|
Vgs(th)(Max)@Id | 15nC @ 4.5V |
Vgs | 2.1V @ 35µA |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 25V |
OperatingTemperature | Surface Mount |
ProductStatus | Not For New Designs |
Package/Case | PQFN (5x6) |
GateCharge(Qg)(Max)@Vgs | 1314pF @ 13V |
Grade | - |
MountingType | 8-PowerVDFN |
InputCapacitance(Ciss)(Max)@Vds | 31W, 50W |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 64A, 145A |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | -55°C ~ 150°C (TJ) |