RdsOn(Max)@Id | 5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 150 nC @ 10 V |
FETFeature | 830W (Tc) |
DraintoSourceVoltage(Vdss) | 200 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | TO-247 (IXTH) |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | Trench |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
Vgs(Max) | 8800 pF @ 25 V |
MinRdsOn) | 16mOhm @ 500mA, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |