Transition Frequency (fT) | 300MHz;200MHz |
---|---|
Operating Temperature | -55u2103~+150u2103@(Tj) |
Transistor Type | 1u4e2aNPN,1u4e2aPNP |
DC Current Gain (hFE@Ic,Vce) | 100@150mA,10V |
Power Dissipation (Pd) | 200mW |
Collector Current (Ic) | 600mA |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@500mA,50mA;1.6V@500mA,50mA |
Collector-Emitter Breakdown Voltage (Vceo) | 40V;60V |