RdsOn(Max)@Id | 3.25V @ 100µA (Typ) |
---|---|
Vgs(th)(Max)@Id | +23V, -10V |
Vgs | 11 nC @ 20 V |
FETFeature | 63W (Tc) |
DraintoSourceVoltage(Vdss) | 1700 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | D2PAK-7 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-263-8, DPak (7 Leads + Tab) |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
Vgs(Max) | 184 pF @ 1000 V |
MinRdsOn) | 940mOhm @ 2.5A, 20V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |