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| RdsOn(Max)@Id | 2V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 48.5 nC @ 4.5 V |
| FETFeature | 62.5W (Tc) |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | LFPAK56, Power-SO8 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchMOS™ |
| Qualification | |
| SupplierDevicePackage | SC-100, SOT-669 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| Vgs(Max) | 4457 pF @ 10 V |
| MinRdsOn) | 2.65mOhm @ 25A, 10V |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
MA-COM
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
