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RFD7N10LE

RFD7N10LE

Harris Corporation

N-CHANNEL POWER MOSFET

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Products Specifications
RdsOn(Max)@Id150 nC @ 10 V
Vgs(th)(Max)@Id360 pF @ 25 V
Vgs+10V, -8V
FETFeature-55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureTO-220-3
DriveVoltage(MaxRdsOn300mOhm @ 7A, 5V
ProductStatusActive
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypeTO-220-3
InputCapacitance(Ciss)(Max)@Vds47W (Tc)
Series-
Qualification
SupplierDevicePackage5V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C7A (Tc)
Vgs(Max)-
MinRdsOn)2V @ 250µA
PackageBulk
PowerDissipation(Max)Through Hole
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