RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 12 nC @ 10 V |
FETFeature | 2.2W (Ta), 4.6W (Tc) |
DraintoSourceVoltage(Vdss) | 150 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 6V, 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-SOIC |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | 8-SOIC (0.154, 3.90mm Width) |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.3A (Tc) |
Vgs(Max) | 332 pF @ 50 V |
MinRdsOn) | 1.2Ohm @ 500mA, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |