RdsOn(Max)@Id | 950mV @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±8V |
Vgs | 21 nC @ 4.5 V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 12 V |
OperatingTemperature | 4-Microfoot |
DriveVoltage(MaxRdsOn | 1.8V, 4.5V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 4-XFBGA, CSPBGA |
InputCapacitance(Ciss)(Max)@Vds | 1.47W (Ta) |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | - |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3.6A (Ta) |
Vgs(Max) | - |
MinRdsOn) | 55mOhm @ 1A, 4.5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | Surface Mount |