RdsOn(Max)@Id | 250mOhm @ 1A, 10V |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 2.5V @ 250µA |
Configuration | 4 N-Channel |
FETFeature | Standard |
DraintoSourceVoltage(Vdss) | 57V |
OperatingTemperature | Through Hole |
ProductStatus | Obsolete |
Package/Case | 10-SIP |
GateCharge(Qg)(Max)@Vgs | 200pF @ 10V |
Grade | - |
MountingType | 10-SIP |
InputCapacitance(Ciss)(Max)@Vds | 4W (Ta), 20W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3A (Ta) |
Package | Bulk |
Power-Max | 150°C |