RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 6.4 nC @ 10 V |
FETFeature | 20W (Tc) |
DraintoSourceVoltage(Vdss) | 60 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220FP |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | DeepGATE™, STripFET™ VI |
Qualification | |
SupplierDevicePackage | TO-220-3 Full Pack |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 10A (Tc) |
Vgs(Max) | 340 pF @ 48 V |
MinRdsOn) | 160mOhm @ 5A, 10V |
Package | Tube |
PowerDissipation(Max) | 150°C (TJ) |
STMicroelectronics
Non-Compliant Through Hole 4.6 mm 16.4 mm 10.4 mm 3 Production (Last Updated: 2 years ago) 410 pF