RdsOn(Max)@Id | 270mOhm @ 18A, 10V |
---|---|
Vgs(th)(Max)@Id | 308nC @ 10V |
Vgs | 5V @ 5mA |
Configuration | 2 N-Channel (Half Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 1000V (1kV) |
OperatingTemperature | Chassis Mount |
ProductStatus | Active |
Package/Case | SP4 |
GateCharge(Qg)(Max)@Vgs | 8700pF @ 25V |
Grade | |
MountingType | SP4 |
InputCapacitance(Ciss)(Max)@Vds | 694W |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 36A |
Package | Bulk |
Power-Max | -40°C ~ 150°C (TJ) |