RdsOn(Max)@Id | 10mOhm @ 69.5A, 10V |
---|---|
Vgs(th)(Max)@Id | 350nC @ 10V |
Vgs | 4V @ 2.5mA |
Configuration | 2 N-Channel (Dual) Asymmetrical |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 100V |
OperatingTemperature | SP3 |
ProductStatus | Obsolete |
Package/Case | -40°C ~ 150°C (TJ) |
GateCharge(Qg)(Max)@Vgs | 9875pF @ 25V |
Grade | - |
MountingType | SP3 |
InputCapacitance(Ciss)(Max)@Vds | 390W |
Series | POWER MOS V® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 139A |
Package | Bulk |
Power-Max | Chassis Mount |