RdsOn(Max)@Id | 540mOhm @ 9A, 10V |
---|---|
Vgs(th)(Max)@Id | 154nC @ 10V |
Vgs | 5V @ 2.5mA |
Configuration | 4 N-Channel (Full Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 1000V (1kV) |
OperatingTemperature | Chassis Mount |
ProductStatus | Active |
Package/Case | SP4 |
GateCharge(Qg)(Max)@Vgs | 4350pF @ 25V |
Grade | |
MountingType | SP4 |
InputCapacitance(Ciss)(Max)@Vds | 357W |
Series | POWER MOS 7® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 18A |
Package | Bulk |
Power-Max | -40°C ~ 150°C (TJ) |