RdsOn(Max)@Id | 960mOhm @ 9A, 10V |
---|---|
Vgs(th)(Max)@Id | 150nC @ 10V |
Vgs | 5V @ 1mA |
Configuration | 4 N-Channel (Full Bridge) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 1000V (1kV) |
OperatingTemperature | Chassis Mount |
ProductStatus | Obsolete |
Package/Case | SP1 |
GateCharge(Qg)(Max)@Vgs | 3876pF @ 25V |
Grade | |
MountingType | SP1 |
InputCapacitance(Ciss)(Max)@Vds | 208W |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11A |
Package | Bulk |
Power-Max | -40°C ~ 150°C (TJ) |