RdsOn(Max)@Id | 2.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 52 nC @ 10 V |
FETFeature | 1.3W (Ta) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | PowerDI5060-8 |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-PowerTDFN |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | -55°C ~ 150°C (TJ) |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11.7A (Ta), 76A (Tc) |
Vgs(Max) | 2747 pF @ 20 V |
MinRdsOn) | 11mOhm @ 9.8A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | Surface Mount |