RdsOn(Max)@Id | 3V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 67 nC @ 10 V |
FETFeature | 1.6W (Ta) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | PowerDI5060-8 |
GateCharge(Qg)(Max)@Vgs | 8-PowerTDFN |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11A (Ta), 61A (Tc) |
Vgs(Max) | 4004 pF @ 20 V |
MinRdsOn) | 15mOhm @ 10A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |