RdsOn(Max)@Id | 18mOhm @ 6A, 4.5V |
---|---|
Vgs(th)(Max)@Id | 36nC @ 4.5V |
Vgs | 1.5V @ 250µA |
Configuration | 2 P-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 12V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-TSSOP |
GateCharge(Qg)(Max)@Vgs | 2644pF @ 6V |
Grade | |
MountingType | 8-TSSOP (0.173, 4.40mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 1W |
Series | PowerTrench® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 6A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
Fairchild Semiconductor
Power Field-Effect Transistor, 7.1A I(D), 20V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8