RdsOn(Max)@Id | 1.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±12V |
Vgs | 135 nC @ 5 V |
FETFeature | 1.3W (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | 8-TSSOP |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | 8-TSSOP (0.173, 4.40mm Width) |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.7A (Ta) |
Vgs(Max) | 7225 pF @ 10 V |
MinRdsOn) | 10mOhm @ 9.7A, 4.5V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
Fairchild Semiconductor
Power Field-Effect Transistor, 7.1A I(D), 20V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8