RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±25V |
Vgs | 62 nC @ 10 V |
FETFeature | 146W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | QFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 43.5A (Tc) |
Vgs(Max) | 1800 pF @ 25 V |
MinRdsOn) | 39mOhm @ 21.75A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |