RdsOn(Max)@Id | 5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | 200 pF @ 25 V |
Vgs | ±30V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 250 V |
OperatingTemperature | TO-220-3 |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | 52W (Tc) |
Series | QFET® |
Qualification | |
SupplierDevicePackage | 5.6 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3.6A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 1.75Ohm @ 1.8A, 10V |
Package | Tube |
PowerDissipation(Max) | Through Hole |