RdsOn(Max)@Id | 1.2V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±12V |
Vgs | 21 nC @ 5 V |
FETFeature | 2.2W (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 4-FlipFet™ |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 4-FlipFet™ |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 5.1A (Ta) |
Vgs(Max) | 1230 pF @ 15 V |
MinRdsOn) | 65mOhm @ 5.1A, 4.5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |