RdsOn(Max)@Id | 1.1V @ 100µA |
---|---|
Vgs(th)(Max)@Id | ±12V |
Vgs | 195 nC @ 4.5 V |
FETFeature | 2.5W (Ta) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 2.5V, 4.5V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 8-SO |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 8-SOIC (0.154, 3.90mm Width) |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 27A (Ta) |
Vgs(Max) | 8555 pF @ 16 V |
MinRdsOn) | 2.45mOhm @ 27A, 4.5V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |