RdsOn(Max)@Id | 2.15V @ 1mA |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 17.8 nC @ 10 V |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | - |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | LFPAK56, Power-SO8 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | SC-100, SOT-669 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 61A (Tc) |
Vgs(Max) | 1006 pF @ 12 V |
MinRdsOn) | 8mOhm @ 15A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | - |