RdsOn(Max)@Id | 2V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 13.3 nC @ 4.5 V |
FETFeature | 62.5W (Tc) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | LFPAK56, Power-SO8 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | SC-100, SOT-669 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 63A (Tc) |
Vgs(Max) | 1565 pF @ 12 V |
MinRdsOn) | 9mOhm @ 25A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |