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| Configuration | H-36265-2 |
|---|---|
| Voltage-Test | 18.5dB |
| CurrentRating(Amps) | 28 V |
| ProductStatus | Not For New Designs |
| Package/Case | 65 V |
| Grade | |
| MountingType | H-36265-2 |
| Power-Output | 600 mA |
| Current-Test | - |
| Voltage-Rated | 55W |
| Series | - |
| Qualification | |
| SupplierDevicePackage | Chassis Mount |
| Technology | LDMOS |
| Frequency | - |
| Package | Tape & Reel (TR) |
| Gain | 960MHz |
| NoiseFigure | 10µA |
Infineon
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PACKAGE 30275, 4 PIN
