RdsOn(Max)@Id | 16mOhm @ 9.6A, 10V |
---|---|
Vgs(th)(Max)@Id | 60nC @ 10V |
Vgs | 2.5V @ 1mA |
Configuration | 2 N-Channel (Dual) |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 30V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SOIC |
GateCharge(Qg)(Max)@Vgs | 2458pF @ 15V |
Grade | - |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 3.3W, 3.1W |
Series | SkyFET®, TrenchFET® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 8A |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | -55°C ~ 150°C (TJ) |