RdsOn(Max)@Id | 2.6V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±16V |
Vgs | 161 nC @ 10 V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 25 V |
OperatingTemperature | 8-SOIC |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 3.5W (Ta), 7.8W (Tc) |
Series | - |
Qualification | |
SupplierDevicePackage | 11175 pF @ 15 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 2.7mOhm @ 20A, 10V |
Package | Tape & Reel (TR) |
PowerDissipation(Max) | Surface Mount |