RdsOn(Max)@Id | 5V @ 500µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 64 nC @ 10 V |
FETFeature | 125W (Tc) |
DraintoSourceVoltage(Vdss) | 600 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | PG-TO220-3-1 |
GateCharge(Qg)(Max)@Vgs | TO-220-3 |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
Vgs(Max) | 1200 pF @ 25 V |
MinRdsOn) | 440mOhm @ 7A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN