Min Operating Temperature | -55 °C |
---|---|
Fall Time | 20 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 650 V |
Drain to Source Resistance | 380 mΩ |
Element Configuration | Single |
Number of Pins | 3 |
Height | 4.4 mm |
Input Capacitance | 1.46 nF |
Width | 10.26 mm |
Lead Free | Contains Lead |
Rds On Max | 380 mΩ |
Max Power Dissipation | 125 W |
Drain to Source Breakdown Voltage | 600 V |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 11 A |
Turn-On Delay Time | 130 ns |
Max Operating Temperature | 150 °C |
Power Dissipation | 125 W |
Continuous Drain Current (ID) | 11 A |
Rise Time | 35 ns |
Length | 8.64 mm |
Turn-Off Delay Time | 150 ns |
Contact Plating | Tin |
Voltage Rating (DC) | 650 V |
Case/Package | TO-220-3 |
Infineon
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN