RdsOn(Max)@Id | 250mOhm @ 3.2A, 10V |
---|---|
Vgs(th)(Max)@Id | 7.7nC @ 10V |
Vgs | 2V @ 250µA (Min) |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 100V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SO |
GateCharge(Qg)(Max)@Vgs | 405pF @ 50V |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 1.25W |
Series | - |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.6A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN