Nominal Vgs | 2 V |
---|---|
Threshold Voltage | 2 V |
REACH SVHC | No SVHC |
Dual Supply Voltage | 100 V |
RoHS | Compliant |
Resistance | 400 mΩ |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 1.7 W |
Drain to Source Resistance | 400 mΩ |
Continuous Drain Current (ID) | 1.5 A |
Packaging | Cut Tape |
Number of Pins | 6 |
Case/Package | SOT-23 |
Max Power Dissipation | 1.1 W |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN