Max Operating Temperature | 150 °C |
---|---|
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 3.9 W |
Drain to Source Resistance | 600 mΩ |
Continuous Drain Current (ID) | 1.8 A |
Threshold Voltage | 4 V |
REACH SVHC | No SVHC |
Packaging | Cut Tape |
Number of Pins | 3 |
RoHS | Compliant |
Case/Package | SOT-223 |
Max Power Dissipation | 3.9 W |
Diodes Incorporated
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN