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| RdsOn(Max)@Id | 2.5V @ 9mA |
|---|---|
| Vgs(th)(Max)@Id | +6V, -5V |
| Vgs | 11.6 nC @ 5 V |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 5V |
| ProductStatus | Discontinued at Digi-Key |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | Die |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | eGaN® |
| Qualification | |
| SupplierDevicePackage | Die |
| FETType | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Current-ContinuousDrain(Id)@25°C | 33A (Ta) |
| Vgs(Max) | 1200 pF @ 20 V |
| MinRdsOn) | 4mOhm @ 33A, 5V |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | -40°C ~ 150°C (TJ) |
