RdsOn(Max)@Id | GaNFET (Gallium Nitride) |
---|---|
Vgs(th)(Max)@Id | 5V |
Vgs | 100 V |
FETFeature | 5.5 nC @ 5 V |
DraintoSourceVoltage(Vdss) | - |
OperatingTemperature | 664 pF @ 50 V |
DriveVoltage(MaxRdsOn | Die |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | 2.5V @ 3mA |
Series | - |
Qualification | |
SupplierDevicePackage | -40°C ~ 150°C (TJ) |
FETType | N-Channel |
Technology | 9.4A (Ta) |
Current-ContinuousDrain(Id)@25°C | Surface Mount |
Vgs(Max) | 10.5mOhm @ 10A, 5V |
MinRdsOn) | Die |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | +6V, -4V |