RdsOn(Max)@Id | 2.5V @ 9mA |
---|---|
Vgs(th)(Max)@Id | +6V, -4V |
Vgs | 8.7 nC @ 5 V |
FETFeature | - |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 5V |
ProductStatus | Not For New Designs |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | Die |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | eGaN® |
Qualification | |
SupplierDevicePackage | Die |
FETType | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Current-ContinuousDrain(Id)@25°C | 53A (Ta) |
Vgs(Max) | 1180 pF @ 20 V |
MinRdsOn) | 4mOhm @ 33A, 5V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -40°C ~ 150°C (TJ) |