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| RdsOn(Max)@Id | - |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | - |
| FETFeature | 769W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-258 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-258-3, TO-258AA |
| FETType | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| Vgs(Max) | - |
| MinRdsOn) | 25mOhm @ 50A |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 225°C (TJ) |
