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| RdsOn(Max)@Id | 583W (Tc) |
|---|---|
| Vgs(th)(Max)@Id | Through Hole |
| Vgs | 175°C (TJ) |
| FETFeature | 1700 V |
| DraintoSourceVoltage(Vdss) | 100A (Tc) |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | - |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | TO-247-3 |
| Series | - |
| Qualification | |
| SupplierDevicePackage | - |
| FETType | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 25mOhm @ 50A |
| Vgs(Max) | TO-247 |
| MinRdsOn) | - |
| Package | Tube |
| PowerDissipation(Max) | - |
