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IRF510STRR

IRF510STRR

Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

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Products Specifications
RdsOn(Max)@Id8.3 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs180 pF @ 25 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn540mOhm @ 3.4A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
Series-
Qualification
SupplierDevicePackage±20V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
Vgs(Max)3.7W (Ta), 43W (Tc)
MinRdsOn)4V @ 250µA
PackageTape & Reel (TR)
PowerDissipation(Max)TO-263 (D2PAK)
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