RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 230 nC @ 10 V |
FETFeature | 3.1W (Ta), 170W (Tc) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-262 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 38A (Tc) |
Vgs(Max) | 2780 pF @ 25 V |
MinRdsOn) | 60mOhm @ 38A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |