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| RdsOn(Max)@Id | 25 nC @ 10 V |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | 330 pF @ 25 V |
| FETFeature | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | ±20V |
| DriveVoltage(MaxRdsOn | 200mOhm @ 5.7A, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | 3.8W (Ta), 48W (Tc) |
| InputCapacitance(Ciss)(Max)@Vds | D2PAK |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | -55°C ~ 175°C (TJ) |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 9.7A (Tc) |
| Vgs(Max) | Surface Mount |
| MinRdsOn) | 4V @ 250µA |
| Package | Tube |
| PowerDissipation(Max) | 10V |
