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| RdsOn(Max)@Id | 26mOhm @ 8.5A, 4.5V |
|---|---|
| Vgs(th)(Max)@Id | 16nC @ 4.5V |
| Vgs | 900mV @ 250µA |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| OperatingTemperature | Surface Mount |
| ProductStatus | Active |
| Package/Case | PowerPAK® 1212-8 Dual |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | - |
| MountingType | PowerPAK® 1212-8 Dual |
| InputCapacitance(Ciss)(Max)@Vds | 1.5W |
| Series | TrenchFET® |
| Qualification | |
| SupplierDevicePackage | - |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6A |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| Power-Max | -55°C ~ 150°C (TJ) |
VISHAY
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power
