RdsOn(Max)@Id | 17mOhm @ 11.8A, 4.5V |
---|---|
Vgs(th)(Max)@Id | 17nC @ 4.5V |
Vgs | 1.5V @ 250µA |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 12V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | PowerPAK® SO-8 Dual |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | PowerPAK® SO-8 Dual |
InputCapacitance(Ciss)(Max)@Vds | 1.4W |
Series | TrenchFET® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 7.6A |
Package | Tape & Reel (TR) |
Power-Max | -55°C ~ 150°C (TJ) |
VISHAY
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power