Min Operating Temperature | -55 °C |
---|---|
Drain to Source Breakdown Voltage | 30 V |
Gate to Source Voltage (Vgs) | 20 V |
Fall Time | 29 ns |
RoHS | Non-Compliant |
Max Operating Temperature | 150 °C |
Power Dissipation | 1.4 W |
Drain to Source Resistance | 27 mΩ |
Continuous Drain Current (ID) | 5.8 A |
Element Configuration | Dual |
Rise Time | 29 ns |
Turn-Off Delay Time | 65 ns |
Number of Pins | 8 |
Case/Package | SOIC |
VISHAY
TRANSISTOR 5.6 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power