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| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 600 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Current Rating | 11 A |
| Fall Time | 20 ns |
| RoHS | Compliant |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation | 125 W |
| Drain to Source Resistance | 380 mΩ |
| Continuous Drain Current (ID) | 11 A |
| Element Configuration | Single |
| Rise Time | 35 ns |
| Turn-Off Delay Time | 150 ns |
| Halogen Free | Not Halogen Free |
| Number of Pins | 3 |
| Input Capacitance | 1.46 nF |
| Voltage Rating (DC) | 600 V |
| Lead Free | Lead Free |
| Rds On Max | 380 mΩ |
| Case/Package | TO-262-3 |
| Max Power Dissipation | 125 W |
Infineon
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Infineon
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
INFINEON
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
