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| Min Operating Temperature | -55 °C |
|---|---|
| Mount | Through Hole |
| Fall Time | 8 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 500 V |
| Drain to Source Resistance | 380 mΩ |
| Element Configuration | Single |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Number of Pins | 3 |
| Height | 9.45 mm |
| Number of Elements | 1 |
| Input Capacitance | 1.2 nF |
| Width | 4.52 mm |
| Lead Free | Lead Free |
| Rds On Max | 380 mΩ |
| Max Power Dissipation | 33 W |
| Drain to Source Breakdown Voltage | 500 V |
| On-State Resistance | 380 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Current Rating | 11.6 A |
| Turn-On Delay Time | 10 ns |
| Max Dual Supply Voltage | 500 V |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 125 W |
| Continuous Drain Current (ID) | 11.6 A |
| Rise Time | 8 ns |
| Length | 10.36 mm |
| Turn-Off Delay Time | 45 ns |
| Halogen Free | Halogen Free |
| Package Quantity | 500 |
| Voltage Rating (DC) | 560 V |
| Case/Package | TO-262-3 |
Infineon
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Infineon
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
INFINEON
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
