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| RdsOn(Max)@Id | 3.9V @ 500µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 49 nC @ 10 V |
| FETFeature | 125W (Tc) |
| DraintoSourceVoltage(Vdss) | 560 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | PG-TO262-3-1 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | CoolMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 11.6A (Tc) |
| Vgs(Max) | 1200 pF @ 25 V |
| MinRdsOn) | 380mOhm @ 7A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Infineon
Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN
INFINEON
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Infineon
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 13.4A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
INFINEON
Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
