Copyright © 2021 Reliable Distributor of Electronic Components - augswan.com
E-mail: sale@augswan.com
Address: 1305 Room，HuangYuYuan, Futian Street, Shenzhen, China 518031
| RdsOn(Max)@Id | 3V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 5.9 nC @ 5 V |
| FETFeature | 3W (Ta) |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | SOT-223-4 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-261-4, TO-261AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 5A (Ta) |
| Vgs(Max) | 235 pF @ 15 V |
| MinRdsOn) | 60mOhm @ 5A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -65°C ~ 150°C (TJ) |
Fairchild Semiconductor
Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
