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| RdsOn(Max)@Id | 35mOhm @ 6.5A, 10V |
|---|---|
| Vgs(th)(Max)@Id | 17 nC @ 10 V |
| Vgs | 2V @ 250µA |
| FETFeature | - |
| DraintoSourceVoltage(Vdss) | MOSFET (Metal Oxide) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| DriveVoltage(MaxRdsOn | 6.5A (Ta) |
| ProductStatus | - |
| Package/Case | TO-261-4, TO-261AA |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | - |
| MountingType | Surface Mount |
| InputCapacitance(Ciss)(Max)@Vds | 365 pF @ 15 V |
| Series | Bulk |
| Qualification | |
| SupplierDevicePackage | SOT-223-4 |
| FETType | Active |
| Technology | N-Channel |
| Current-ContinuousDrain(Id)@25°C | 30 V |
| Vgs(Max) | ±20V |
| MinRdsOn) | 4.5V, 10V |
| Package | 634 |
| PowerDissipation(Max) | 3W (Ta) |
Fairchild Semiconductor
Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
