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RdsOn(Max)@Id | 5.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±25V |
Vgs | 9.1 nC @ 10 V |
FETFeature | 2W (Tc) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | SOT-223 (TO-261) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | UltraFRFET™, Unifet™ II |
Qualification | |
SupplierDevicePackage | TO-261-4, TO-261AA |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 2A (Tc) |
Vgs(Max) | 476 pF @ 25 V |
MinRdsOn) | 3Ohm @ 1A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET