Continuous Drain Current (Id) | 9A |
---|---|
Type | Nu6c9fu9053 |
Drain Source Voltage (Vdss) | 200V |
Power Dissipation (Pd) | 55W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250u03bcA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 280mu03a9@10V,4.5A |
ON Semiconductor
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET